[before 1997] [1997] [1998] [2000] [2001] [2002] [2003] [2004] [2005]

1999

I. Pintér, A. H. Abdulhadi, Zs. Makaró, N. Q. Khanh, M. Ádám, I. Bársony, J. Poortmans, Hai-Zhi Song and G. J. Adriaenssens:" PLASMA IMMERSION ION IMPLANTATION FOR SHALLOW JUNCTIONS IN SILICON", Appl. Surf. Science 138-139 (1999) 224-227

Zs. J. Horváth, E. Gombia, D. Pal, Cs. Kovacsics, G. Cappannese, I. Pintér, M. Ádám, R. Mosca and L. Dózsa: "Effect of Defect Bands on the Electrical Characteristics of Irradiated GaAs ans Si", phys.stat. sol. (a) 171, 311 (1999)

K. Molnár, T. Mohácsy, P. Varga, É. Vázsonyi, I. Bársony " Characterization of ITO/porous silicon LED structures Journal of Luminescence 80 (1999) 91-97

E. Vázsonyi, K. De Clerq, R. Einhaus, E. Van Kerschaver, K. Said, J. Poortmans, J.Szlufcik, J.Nijs "Improved anisortopic etching process for industrial texturing of silicon solar cells." Solar Energy Materials and Solar Cells 57 (1999) 179-188

I. Pintér, A. H. Abdulhadi, I. Bársony, J. Poortmans, S. Sivoththaman and G. J. Adriaenssens, "Combined PIII-RTP Doping of Si with Low Defect Density", E-MRS' 99 Conference, June 1-4, 1999 Strasbourg, France, Symposium F, Book of Abstracts, Paper F-II.2. Oral presentation

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